Title :
Device-technological modeling of bipolar transistor with base in the well
Author :
Kozlov, Anton V. ; Tikhonov, Robert D.
Author_Institution :
Moscow state Inst. of Electron. Eng., Tech. Univ., Moscow
Abstract :
Device-technological modeling of bipolar magnetotransistor allows to reduce expenses for design of new updates. Modeling of bipolar magnetotransistor with base in a well has enabled to investigate distribution of charge carriers, currents of electrons and holes in structure of the device. The establishment of connection of electric characteristics with features of distribution of carriers has revealed the concentration- recombination mechanism of sensitivity. The knowledge of the mechanism of sensitivity results in optimization of structure and increase of relative current sensitivity up to 8 T-1.
Keywords :
bipolar transistors; current distribution; magnetic devices; semiconductor device models; bipolar magnetotransistor; bipolar transistor; charge carriers distribution; concentration-recombination mechanism; current sensitivity; device-technological modeling; Bipolar transistors; Charge carrier processes; Current measurement; Electrodes; Electron emission; Impurities; Integrated circuit measurements; Magnetic field measurement; Spontaneous emission; Voltage; Magnetotransistor; modeling; sensitivity;
Conference_Titel :
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location :
Novosibirsk
Print_ISBN :
978-5-7782-0893-3
DOI :
10.1109/SIBEDM.2008.4585870
