DocumentCode :
2373720
Title :
Effect of magnetic field on the current-voltage characteristics of PbSnTe:In films
Author :
Epov, Vladimir S. ; Klimov, Alexander E. ; Shumsky, Vladimir N.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk
fYear :
2008
fDate :
1-5 July 2008
Firstpage :
84
Lastpage :
87
Abstract :
Transport of charge carriers in Pb1-xSnxTe:In films at helium temperatures in regimes dominated by charge-carrier injection out of contacts is discussed. Data illustrating the effect of constant magnetic field on the injection currents are reported. Possible mechanisms of observed phenomena are discussed.
Keywords :
IV-VI semiconductors; indium; lead compounds; magnetic field effects; thin films; PbSnTe:In; PbSnTe:In films; charge carrier transport; charge-carrier injection; current-voltage characteristics; magnetic field effect; Charge carriers; Current; Current-voltage characteristics; Dielectric materials; Ferroelectric films; Magnetic films; Optical films; Semiconductor films; Temperature; Voltage; injection from contacts; magnetoresistance; narrow-gap semiconductor; traps;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location :
Novosibirsk
ISSN :
1815-3712
Print_ISBN :
978-5-7782-0893-3
Type :
conf
DOI :
10.1109/SIBEDM.2008.4585874
Filename :
4585874
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2373720
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