DocumentCode :
2373938
Title :
Numerical Analysis the Performance of Field Emission Display with Secondary Electrons Emission
Author :
Zhao, Hongping ; Lei, Wei ; Zhang, Xiaobing ; Yang, Guodong
Author_Institution :
Dept. of Electron. Eng., Southeast Univ.
fYear :
0
fDate :
0-0 0
Firstpage :
509
Lastpage :
510
Abstract :
In this paper, we calculated and compared the performance of three different structures of CNT-FED: a normal triode structure, a double-gate structure, and a structure with insulator channel. By calculating the electrical field and the electron trajectories, we found that the normal triode structure is easy to induce pixel-pixel interference; while the double-gate structure subtract the anode current because of the interception of the second gate. In the structure with insulator channel, the disadvantages mentioned above can be avoided. Furthermore, when the cathode has some defects, the uniformity of the anode current can be improved because of the secondary electrons generated at the surface of the insulator wall
Keywords :
carbon nanotubes; field emission displays; secondary electron emission; triodes; CNT-FED; anode current; double-gate structure; electrical field; electron trajectories; field emission display; insulator channel; insulator wall; numerical analysis; pixel-pixel interference; secondary electrons emission; triode structure; Anodes; Carbon nanotubes; Cathodes; Electrodes; Electron emission; Electron sources; Flat panel displays; Insulation; Interference; Numerical analysis; FED; insulator chunnel; secondary electrons emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electronics Conference, 2006 held Jointly with 2006 IEEE International Vacuum Electron Sources., IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0108-9
Type :
conf
DOI :
10.1109/IVELEC.2006.1666406
Filename :
1666406
Link To Document :
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