DocumentCode
2373986
Title
Gate-substrated Structure to Improve FED Performance
Author
Wei, Gu ; Wei, Lei ; Xiaobing, Zhang
Author_Institution
Dept. of Electron. Eng., Southeast Univ.
fYear
0
fDate
0-0 0
Firstpage
515
Lastpage
516
Abstract
A combined circuit model of both outer driving circuit and inner circuit is given for mode FED, normal structured or gate-substrated. Based on the model, anode voltage´s effect on gate voltage is analyzed. Charging effect on driving signal may affect grayscale of figures. A structure is suggested to reduce such effect
Keywords
driver circuits; field emission displays; FED performance; anode voltage effect; charging effect; combined circuit model; driving signal; gate voltage; gate-substrated structure; inner driving circuit; outer driving circuit; Anodes; Capacitors; Cathodes; Circuits; Dielectrics and electrical insulation; Electrodes; Gray-scale; Manufacturing; Pulse width modulation; Voltage; FED; charging effect; circuit model;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electronics Conference, 2006 held Jointly with 2006 IEEE International Vacuum Electron Sources., IEEE International
Conference_Location
Monterey, CA
Print_ISBN
1-4244-0108-9
Type
conf
DOI
10.1109/IVELEC.2006.1666409
Filename
1666409
Link To Document