Tuning of Barium Strontium Titanate (BST) Thin Film Materials Employing High Resistive Thin Indium Tin Oxide (ITO) Layer

Author

Ahmad, Mahmoud Al ; Payan, Sandrine ; Michau, Dominique ; Maglione, Mario ; Plana, Robert

Author_Institution

LAAS CNRS, Toulouse

fYear

2008

fDate

27-31 Oct. 2008

Firstpage

809

Lastpage

812

Abstract

The rapid growth of communication systems demands for wide tunable low loss microwave components. Barium strontium titanate (BST) voltage dependent permittivity has shown a great potential impact for the fabrication of frequency agile components. In this work, the indium tin oxide (ITO) high resistive thin layer is used as a bottom electrode to tune BST based structures such as parallel plate capacitor and CPW line. The tunability is reduced due to voltage drop in the ITO layer which exhibits a high dc resistance. The effect of using ITO thin layer in microwave device is explored.

Keywords

barium compounds; capacitors; coplanar transmission lines; coplanar waveguides; dielectric materials; dielectric thin films; electrical resistivity; indium compounds; microwave devices; microwave materials; strontium compounds; BST dielectric thin film; BaSrTiO₃-ITO; CPW line; barium strontium titanate thin film; bottom electrode; dc resistance; high resistive thin indium tin oxide layer; microwave device; parallel plate capacitor; tunability; Barium; Binary search trees; Fabrication; Indium tin oxide; Permittivity; Strontium; Titanium compounds; Transistors; Tuning; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. EuMC 2008. 38th European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-006-4

Type

conf

DOI

10.1109/EUMC.2008.4751576

Filename

4751576