Title :
New piezoelectric materials
Author :
Silvestrova, I.M. ; Pisarevsky, Yu.V. ; Bezdelkin, V.V. ; Senyushenkov, P.A.
Author_Institution :
Inst. of Crystallogr., Acad. of Sci., Moscow, Russia
Abstract :
The Institute of Crystallography of the Russian Academy of Science is conducting a program aimed at the search for, the growth, and the investigation of new materials for different electronic applications: resonators, filters, UHF acoustic high-temperature receivers, temperature sensors, pressure sensors, acceleration sensors, etc. Different crystals have been grown by the following methods: (1) hydrothermal, (2) Czochralski, (3) from solution in the melt, and (4) from solutions. The grown crystals were investigated by resonance and ultrasonic methods in order to obtain information on elastic and piezoelectric properties. Dielectric, acoustooptic, and UHF techniques were used for acoustic loss and dielectric constant measurements. The perfection of grown crystals was characterized by different X-ray and optical methods
Keywords :
crystal growth from melt; crystal growth from solution; elastic constants; gallium compounds; garnets; lanthanum compounds; neodymium compounds; permittivity; piezoelectric materials; silicon compounds; strontium compounds; ultrasonic velocity; yttrium compounds; 20 degC; Ca3Ga2Ge4O14; Czochralski method; La3Ga5SiO14; Nd3Ga3SiO14; SiO2; Sr3Ga2Ge4O14; UHF acoustic high-temperature receivers; UHF techniques; Y3Al5O12; acceleration sensors; acoustic loss; crystal growth from solution; dielectric constant measurements; elastic properties X-ray methods; filters; hydrothermal method; optical methods; piezoelectric materials; piezoelectric properties; pressure sensors; resonance method; resonators; shear wave; temperature sensors; ultrasonic methods; Acoustic materials; Acoustic sensors; Conducting materials; Crystalline materials; Crystallography; Crystals; Dielectric loss measurement; Optical resonators; Piezoelectric materials; Temperature sensors;
Conference_Titel :
Frequency Control Symposium, 1993. 47th., Proceedings of the 1993 IEEE International
Conference_Location :
Salt Lake City, UT
Print_ISBN :
0-7803-0905-7
DOI :
10.1109/FREQ.1993.367418
