Title :
The optical measurement technique of the definition of the GaAs structure deflection degree from stexiometry
Author :
Litvinova, M.B. ; Hertcova, N.Y. ; Seliverstova, S.R.
Author_Institution :
Inst. of the Phys. of Semicond., Nat. Acad. of Sci. of Ukraine, Kiev
Abstract :
Despite of the existence of a number techniques for the study of GaAs crystal structure, creation of the method for research of a deflection extent of its composition from the stexiometrical GaAs compound (a solid state) still remains actual. In the given research such a method based on dependence of the photoquenching energy of the photoluminescent (PL) bands caused by the EL2 defects upon the vacancy composition of the undoped crystals is proposed
Keywords :
III-V semiconductors; gallium arsenide; optical materials; photoluminescence; point defects; radiation quenching; EL2 defects; GaAs; GaAs structure deflection degree; optical measurement technique; photoluminescent bands; photoquenching energy; stexiometry; undoped crystals vacancy composition; Crystals; Gallium arsenide; III-V semiconductor materials; Laser excitation; Measurement techniques; Metastasis; Photoluminescence; Physics; Solid state circuits; Temperature dependence;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2003. Proceedings of CAOL 2003. First International Conference on
Conference_Location :
Alushta, Crimea
Print_ISBN :
0-7803-7948-9
DOI :
10.1109/CAOL.2003.1251297
