The optical measurement technique of the definition of the GaAs structure deflection degree from stexiometry

Author

Litvinova, M.B. ; Hertcova, N.Y. ; Seliverstova, S.R.

Author_Institution

Inst. of the Phys. of Semicond., Nat. Acad. of Sci. of Ukraine, Kiev

Volume

2

fYear

2003

fDate

16-20 Sept. 2003

Firstpage

159

Abstract

Despite of the existence of a number techniques for the study of GaAs crystal structure, creation of the method for research of a deflection extent of its composition from the stexiometrical GaAs compound (a solid state) still remains actual. In the given research such a method based on dependence of the photoquenching energy of the photoluminescent (PL) bands caused by the EL2 defects upon the vacancy composition of the undoped crystals is proposed

Keywords

III-V semiconductors; gallium arsenide; optical materials; photoluminescence; point defects; radiation quenching; EL2 defects; GaAs; GaAs structure deflection degree; optical measurement technique; photoluminescent bands; photoquenching energy; stexiometry; undoped crystals vacancy composition; Crystals; Gallium arsenide; III-V semiconductor materials; Laser excitation; Measurement techniques; Metastasis; Photoluminescence; Physics; Solid state circuits; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Optoelectronics and Lasers, 2003. Proceedings of CAOL 2003. First International Conference on

Conference_Location

Alushta, Crimea

Print_ISBN

0-7803-7948-9

Type

conf

DOI

10.1109/CAOL.2003.1251297

Filename

1251297