A Resonant Gate Drive Circuit with Reduced MOSFET Switching and Gate Losses

Author

Eberle, Wilson ; Liu, Yan Fei ; Sen, P.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Queen´´s Univ.

fYear

2006

fDate

6-10 Nov. 2006

Firstpage

1745

Lastpage

1750

Abstract

In this paper, a new resonant gate drive circuit is proposed for power MOSFETs. The proposed circuit achieves quick turn on and turn off transition times to reduce switching loss and conduction loss in power MOSFETS. In addition, it can recover a portion of the CV² gate energy normally dissipated in a conventional driver. The circuit consists of four control switches and a small resonant inductance. The current through the resonant inductance is discontinuous in order to minimize circulating current conduction loss. Experimental results are presented for the proposed driver operating in a boost converter at 1 MHz. At 5 V gate drive, 4% efficiency improvement is achieved. At 12 V gate drive, 6.5% efficiency improvement is achieved

Keywords

PWM power convertors; driver circuits; power MOSFET; switching circuits; 1 MHz; 12 V; 4 percent; 5 V; 6.5 percent; boost converter; control switches; gate losses; power MOSFET; reduced MOSFET switching; resonant gate drive circuit; small resonant inductance; Driver circuits; Drives; MOSFET circuits; Power MOSFET; Quadratic programming; RLC circuits; Resonance; Switches; Switching circuits; Switching loss;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE Industrial Electronics, IECON 2006 - 32nd Annual Conference on

Conference_Location

Paris

ISSN

1553-572X

Print_ISBN

1-4244-0390-1

Type

conf

DOI

10.1109/IECON.2006.347843

Filename

4153536