Performance of a sequentially deposited Ti/TiN/AlCuSi metallization structure

Author

Gonzales, S. ; Magnella, C. ; Boeck, B. ; Cox, K. ; Huebinger, L. ; Mosely, R. ; Nulman, J. ; Gilboa, H.

Author_Institution

Motorola Inc., Austin, TX, USA

fYear

1991

fDate

11-12 Jun 1991

Firstpage

316

Lastpage

319

Abstract

The electrical and physical properties of a sequentially deposited Ti/TiN/AlSiCu metallization structure are described. Emphasis is on the barrier properties of this multilayer film structure as function of the thickness, stoichiometry, resistance uniformity, bulk resistivity, stress, and deposition temperature. The leakage current was measured to be less than 100 pA before and after thermal stressing in the 450°C to 550°C range. Deposition temperature was found to have the greatest effect on film properties. Characterization results were verified on SRAM production lots. Barrier integrity was found to be stable at temperatures up to 550°C

Keywords

aluminium alloys; copper alloys; integrated circuit technology; leakage currents; metallisation; silicon alloys; sputter deposition; thermal stresses; titanium; titanium compounds; 100 pA; 450 to 550 degC; SRAM production lots; Ti-TiN-AlCuSi; barrier integrity; barrier properties; bulk resistivity; deposition temperature; leakage current; multilayer film structure; physical properties; planar magnetron sputtering; resistance uniformity; sequentially deposited metallization structure; stoichiometry; stress; thermal stressing; thickness; Conductivity; Current measurement; Electric resistance; Electrical resistance measurement; Leakage current; Metallization; Nonhomogeneous media; Temperature; Thermal stresses; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE

Conference_Location

Santa Clara, CA

Print_ISBN

0-87942-673-X

Type

conf

DOI

10.1109/VMIC.1991.153011

Filename

153011