700W Long Pulse UHF SiC Transistor for Radar Applications

Author

Leverich, Lyle ; Shi, Tiefeng ; Mallinger, Mike ; Chang, Jerry ; Leader, Charlie

Author_Institution

Microsemi Corp. PPG, Santa Clara, CA

fYear

2008

fDate

27-31 Oct. 2008

Firstpage

975

Lastpage

978

Abstract

The performance of a 700 Watt SiC SIT device using state of the art silicon carbide technology is described. Operating under pulsed RF conditions of 1mS pulse width, 20% duty cycle, it can deliver 700 Watts peak power at 96 volts. More than 50% efficiency and 8.2 dB gain are attained over the bandwidth of 400-450 MHz. The power density is 1.9 watts/mil. Thermal resistance is 0.19degC/W. The junction temperature remains below 150degC at a flange temperature of 70degC. This combination of high power density and high voltage operation makes these new generation devices ideally suited for new transmitter designs in UHF radar systems.

Keywords

UHF transistors; microwave power transistors; silicon compounds; thermal resistance; wide band gap semiconductors; SiC; UHF SiC transistor; UHF radar; power 700 W; power density; silicon carbide technology; temperature 70 degC; thermal resistance; voltage 96 V; Bandwidth; Flanges; Gain; Radar applications; Radio frequency; Silicon carbide; Space vector pulse width modulation; Temperature; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. EuMC 2008. 38th European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-006-4

Type

conf

DOI

10.1109/EUMC.2008.4751618

Filename

4751618