Title :
700W Long Pulse UHF SiC Transistor for Radar Applications
Author :
Leverich, Lyle ; Shi, Tiefeng ; Mallinger, Mike ; Chang, Jerry ; Leader, Charlie
Author_Institution :
Microsemi Corp. PPG, Santa Clara, CA
Abstract :
The performance of a 700 Watt SiC SIT device using state of the art silicon carbide technology is described. Operating under pulsed RF conditions of 1mS pulse width, 20% duty cycle, it can deliver 700 Watts peak power at 96 volts. More than 50% efficiency and 8.2 dB gain are attained over the bandwidth of 400-450 MHz. The power density is 1.9 watts/mil. Thermal resistance is 0.19degC/W. The junction temperature remains below 150degC at a flange temperature of 70degC. This combination of high power density and high voltage operation makes these new generation devices ideally suited for new transmitter designs in UHF radar systems.
Keywords :
UHF transistors; microwave power transistors; silicon compounds; thermal resistance; wide band gap semiconductors; SiC; UHF SiC transistor; UHF radar; power 700 W; power density; silicon carbide technology; temperature 70 degC; thermal resistance; voltage 96 V; Bandwidth; Flanges; Gain; Radar applications; Radio frequency; Silicon carbide; Space vector pulse width modulation; Temperature; Thermal resistance; Voltage;
Conference_Titel :
Microwave Conference, 2008. EuMC 2008. 38th European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-006-4
DOI :
10.1109/EUMC.2008.4751618
