DocumentCode :
2375082
Title :
A study of a MSW device using a low-loss Bi,Ga substituted YIG film having a proper growth induced anisotropy magnetic field characterized by ultra-low frequency-temperature dependencies
Author :
Tanno, Nasayuki ; NAKAZAWA, Mitsuo
Author_Institution :
Shinshu Univ., Wakasato, Nagano City, Japan
fYear :
1993
fDate :
2-4 Jun 1993
Firstpage :
722
Lastpage :
727
Abstract :
A YIG film having a small frequency-temperature dependence with a low ΔH has been investigated both theoretically and experimentally. It is found that the frequency-temperature characteristics of a low-loss Bi,Ga substituted YIG film epitaxially grown on a (111) oriented GGG substrate with a proper growth-induced anisotropy magnetic field are better than those of a YIG sphere. A MSFVW chip resonator made from this film is also demonstrated
Keywords :
ferrimagnetic resonance; garnets; induced anisotropy (magnetic); magnetic epitaxial layers; magnetic microwave devices; magnetic thin film devices; magnetostatic wave devices; yttrium compounds; (III) surface; BiYFe5O12Ga5O12; BiYIGGG; GdGG; GdGa5O12; MSFVW chip resonator; MSW device; YIG film; epitaxial growth; ferrimagnetic resonance; frequency-temperature dependence; growth-induced anisotropy magnetic field; magnetostatic forward volume wave; Anisotropic magnetoresistance; Frequency; Magnetic field measurement; Magnetic fields; Magnetic films; Magnetic materials; Microwave devices; Resonance; Substrates; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium, 1993. 47th., Proceedings of the 1993 IEEE International
Conference_Location :
Salt Lake City, UT
Print_ISBN :
0-7803-0905-7
Type :
conf
DOI :
10.1109/FREQ.1993.367468
Filename :
367468
Link To Document :
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