Al/TiN/W/Si contact metallization using multi-chamber deposition system

Author

Saitoh, S. ; Inoue, M. ; Hara, T.

Author_Institution

Basic Process Dev. Div., Fujitsu Ltd., Kawasaki, Japan

fYear

1991

fDate

11-12 Jun 1991

Firstpage

323

Lastpage

325

Abstract

Thermally Stable Al/TiN/W/Si contact metallization was fabricated using a multi-chamber deposition system that included a selective CVD module, a sputter etching module, and sputter deposition modules. The thermal stability of the contact resistance was affected by the exposure of W plugs to air. Sequentially deposited samples showed low and stable contact resistance up to 550°C. In contrast, for samples exposed to air after W plug formation, contact resistance was unstable. Air-exposure of the W plug degraded the contact system´s thermal stability

Keywords

aluminium; chemical vapour deposition; contact resistance; integrated circuit technology; metallisation; silicon; sputter deposition; sputter etching; titanium compounds; tungsten; Al-TiN-W-Si contact metallization; VLSI circuits; air exposure; contact resistance; multi-chamber deposition; selective CVD module; sputter deposition modules; sputter etching module; thermal stability; Annealing; Contact resistance; Electrical resistance measurement; Leakage current; Metallization; Plugs; Sputter etching; Temperature; Thermal stability; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE

Conference_Location

Santa Clara, CA

Print_ISBN

0-87942-673-X

Type

conf

DOI

10.1109/VMIC.1991.153013

Filename

153013