DocumentCode :
2375402
Title :
Integrated Magnetic Loop Probe in GaAs Technology for Active Near-Field Sensor
Author :
Uddin, Nasir ; Spang, Matthias ; Thiede, Andreas
Author_Institution :
Dept.of High-Freq. Electron., Univ. of Paderborn, Paderborn
fYear :
2008
fDate :
27-31 Oct. 2008
Firstpage :
1070
Lastpage :
1073
Abstract :
This paper reports on design, simulation and measurement of miniature rectangular loops in OMMIC ED02AH GaAs technology. The loops are intended for integration on chip with other active circuitry for near-field scanning of printed circuit boards (PCB) as well as large scale integrated (LSI) circuits. Our target frequency range is from 1 MHz to 3 GHz and is planned to extend up to 10 GHz. Electromagnetic (EM) field simulation results from two simulators as well as on-wafer measurement results are presented. A new rectangular loop structure using the via-hole and backside metallization is proposed.
Keywords :
III-V semiconductors; electromagnetic fields; gallium arsenide; microwave integrated circuits; printed circuits; sensors; GaAs; OMMIC ED02AH technology; PCB; active near-field sensor; backside metallization; electromagnetic field simulation; frequency 1 MHz to 3 GHz; integrated magnetic loop probe; large scale integrated circuits; miniature rectangular loops; on-wafer measurement; printed circuit boards; Circuit simulation; Frequency; Gallium arsenide; Integrated circuit measurements; Integrated circuit technology; Large scale integration; Magnetic sensors; Printed circuits; Probes; Semiconductor device measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2008. EuMC 2008. 38th European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-006-4
Type :
conf
DOI :
10.1109/EUMC.2008.4751642
Filename :
4751642
Link To Document :
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