Dielectric Rod Waveguide Travelling Wave Amplifier Based on AlGaAs/GaAs Heterostructure

Author

Pousi, Patrik ; Lioubtchenko, Dmitri ; Dudorov, Sergey ; Räisänen, Antti V.

Author_Institution

Dept. of Radio Sci. & Eng., Helsinki Univ. of Technol., Helsinki

fYear

2008

fDate

27-31 Oct. 2008

Firstpage

1082

Lastpage

1085

Abstract

In this paper travelling wave amplification is experimentally demonstrated in the dielectric rod waveguide at W band. An AlGaAs/GaAs heterostructure chip is inserted in the waveguide, and the applied electric field causes an electron drift. Due to the energy transfer from the drifting electrons the electromagnetic wave travelling in the periodic structure is amplified. A maximum of about 8 dB/cm electronic gain was observed in the measurements with the electric field of 150 V/cm.

Keywords

III-V semiconductors; aluminium compounds; dielectric waveguides; gallium arsenide; microwave materials; periodic structures; travelling wave amplifiers; AlGaAs-GaAs; W band; dielectric rod waveguide travelling wave amplifier; electromagnetic wave travelling; electron drift; periodic structure; travelling wave amplification; Dielectrics; Electric variables measurement; Electromagnetic scattering; Electromagnetic waveguides; Electrons; Energy exchange; Gain measurement; Gallium arsenide; Periodic structures; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. EuMC 2008. 38th European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-006-4

Type

conf

DOI

10.1109/EUMC.2008.4751645

Filename

4751645