• DocumentCode
    2375483
  • Title

    A 16-Gb/s differential I/O cell with 380fs RJ in an emulated 40nm DRAM process

  • Author

    Nguyen, Nhat ; Frans, Yohan ; Leibowitz, Brian ; Li, Simon ; Navid, Reza ; Aleksic, Marko ; Lee, Fred ; Quan, Fredy ; Zerbe, Jared ; Perego, Rich ; Assaderaghi, Fari

  • Author_Institution
    Rambus Inc., Los Altos, CA
  • fYear
    2008
  • fDate
    18-20 June 2008
  • Firstpage
    128
  • Lastpage
    129
  • Abstract
    This paper describes a 16-Gb/s differential bidirectional I/O transceiver cell in an emulated 40 nm DRAM process that has a fan-out of four-inverter delay (FO4) of 45 ps, resulting in a bit time that is only 1.4 FO4 delays long. The transceiver implements several techniques to achieve low jitter despite the slow process and constrained power consumption, including a quad rate clocking with closed-loop quadrature correction, a shared LC-PLL with an octagonal inductor in a three-metal process, and a data-dependent regulator. The transceiver has measured random jitter of 380 fs rms at the transmitter output and BER <10-14 while consuming 8 mW/Gb/s.
  • Keywords
    DRAM chips; inductors; jitter; phase locked loops; transceivers; DRAM process; LC-PLL; bit rate 16 Gbit/s; closed-loop quadrature correction; data-dependent regulator; differential bidirectional I/O transceiver cell; four-inverter delay; octagonal inductor; quad rate clocking; size 40 nm; three-metal process; Bit error rate; Clocks; Delay effects; Energy consumption; Inductors; Jitter; Random access memory; Regulators; Transceivers; Transmitters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 2008 IEEE Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-1804-6
  • Electronic_ISBN
    978-1-4244-1805-3
  • Type

    conf

  • DOI
    10.1109/VLSIC.2008.4585979
  • Filename
    4585979