DocumentCode :
2375500
Title :
Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications
Author :
Millon, Bradley J. ; Wood, Simon M. ; Pengelly, Raymond S.
Author_Institution :
Cree Inc., Research Triangle Park, NC
fYear :
2008
fDate :
27-31 Oct. 2008
Firstpage :
1090
Lastpage :
1093
Abstract :
2.5 and 5 Watt average power (15 and 30 Watt peak power) GaN HEMT amplifiers for WiMAX signal protocols have been designed and fabricated for use in the 5.5 to 5.8 GHz band. The 2.5 Watt PA produces 11 dB of gain and the 5 Watt PA produces 10 dB of gain with EVMs less than 2.5% at the respective average power with drain efficiencies greater than 26% at average power. A design methodology for optimizing linear performance is described for these two transistors and resultant amplifiers.
Keywords :
III-V semiconductors; WiMax; amplifiers; gallium compounds; high electron mobility transistors; microwave amplifiers; HEMT amplifiers; HEMT transistor; WiMAX signal protocols; frequency 5 GHz to 6 GHz; gain 10 dB; gain 11 dB; Dynamic range; Gallium nitride; HEMTs; Impedance; Linearity; Microwave transistors; Power amplifiers; Radiofrequency amplifiers; Signal design; WiMAX;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2008. EuMC 2008. 38th European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-006-4
Type :
conf
DOI :
10.1109/EUMC.2008.4751647
Filename :
4751647
Link To Document :
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