DocumentCode
2375670
Title
UV detectors based on ZnxIn2S3+x and related compounds
Author
Arama, E. ; Ababii, I. ; Zhitar, V. ; Shemyakova, T.
Author_Institution
Univ. of Medicine & Pharmacy, Chisinau, Moldova
Volume
1
fYear
2003
fDate
28 Sept.-2 Oct. 2003
Abstract
UV detectors based on surface-barrier structures and new kinds of photoresistive UV detectors have been developed. Their characteristics are presented in comparison with those of other structures.
Keywords
indium compounds; ternary semiconductors; ultraviolet detectors; zinc compounds; UV detectors; ZnxIn2S3+x; characteristics; photoresistive UV detector; surface-barrier structures; Degradation; Detectors; Filters; Optical surface waves; Photoconductivity; Photodetectors; Platinum; Schottky diodes; Semiconductor diodes; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN
0-7803-7821-0
Type
conf
DOI
10.1109/SMICND.2003.1251365
Filename
1251365
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