DocumentCode
2375683
Title
Poly-silicon thin layer photodetector structures
Author
Budianu, E. ; Purica, M. ; Manea, E. ; Kusko, M.
Author_Institution
Nat. Inst. for Res. & Dev. in Microtechnologies, Bucharest, Romania
Volume
1
fYear
2003
fDate
28 Sept.-2 Oct. 2003
Abstract
A photodetector structure based on thin poly-Si layers together with technological process and structure optoelectronic characterisation are presented. The optical improvement of the structure by the reflection of unabsorbed radiation on the backside and by the reflectance minimizing on the topside by antireflecting coating was analyzed. The structure optoelectronic characterization revealed a good sensibility of 60 μA/klx and a fast response.
Keywords
antireflection coatings; elemental semiconductors; photodetectors; semiconductor thin films; silicon; Si; antireflecting coating; polysilicon thin layer photodetector structures; structure optoelectronic characterisation; thin poly-Si layers; unabsorbed radiation reflection; Absorption; Coatings; High speed optical techniques; Optical films; Optical sensors; Optical surface waves; Photodetectors; Reflectivity; Silicon; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN
0-7803-7821-0
Type
conf
DOI
10.1109/SMICND.2003.1251366
Filename
1251366
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