Title :
Manufacturable local interconnect technology fully compatible with titanium salicide process
Author :
Hayashida, H. ; Toyoshima, Y. ; Shinagawa, H. ; Suizu, Y. ; Kunishima, I. ; Suguro, K. ; Hashimoto, K.
Author_Institution :
Semicond. Device Eng. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
Local interconnect technology has been widely accepted because of advantages such as increase of packing density and reduction of parasitics. Local interconnect technology of a new structure utilizing TiSi2 from the reaction of Ti and polysilicon is described. The technology is fully compatible with the salicide process. Moreover, the processing offers low resistivity interconnection with low junction leakage because of its inherent structure. It is confirmed that the process is manufacturable for 0.5 μm CMOS
Keywords :
CMOS integrated circuits; integrated circuit technology; metallisation; titanium compounds; 0.5 micron; CMOS; Ti-Si; TiSi2; local interconnect technology; low junction leakage; low resistivity interconnection; polysilicon; salicide process; CMOS process; CMOS technology; Dry etching; Fabrication; Manufacturing processes; Shape; Tin; Titanium; Ultra large scale integration; Wet etching;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153016
