High performance CMOS current comparator using MTCMOS technique design

This paper presented a simulation result of current comparator with low power and low leakage current using Multi-Threshold CMOS technique (MTCMOS). In all integrated circuit power consumption plays a vital role which is enumerated as top challenges for semiconductor in international technology. In given paper designing a circuit of comparator with MTCMOS circuit and without MTCMOS circuit and then compared these circuits with different parameters by changing voltage, frequency and temperature. In these CMOS current comparator circuit different parameters calculated like delay, power dissipation, signal to noise ratio, leakage power and leakage current. The multi-threshold complementary metal oxide semiconductor technique is proposed to reduce the power consumption and leakage current. After propagating the circuit the leakage power is reduced 89% and leakage current 73% using MTCMOS technique. The new comparator has been in 180nm technology using cadence tool. The simulation and analytical result show that the proposed circuit is correct.