Title :
Switching transients in high-frequency high-power converters using power MOSFET´S
Author :
Sloane, Thomas H. ; Owen, Harry A., Jr. ; Wilson, Thomas G.
Author_Institution :
Department of Electrical Engineering, Duke University, Durham, N.C. 27706
Abstract :
The use of metal-oxide-semiconductor field?? effect transistors in de-to-de converters as the controlled switch has become practical with the development of power MOSFET´s. The use of these devices in parallel in a high-frequency high?? voltage high-power converter is investigated. Stray circuit inductances in a two-winding volt?? age-or-current step-up converter have a pronounced effect on some of the currents and voltages during the turning-on and turning-off intervals.
Keywords :
Capacitance; Computational modeling; Equivalent circuits; Integrated circuit modeling; Logic gates; MOSFET; Switches;
Conference_Titel :
Power Electronics Specialists Conference, 1979 IEEE
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/PESC.1979.7081033
