• DocumentCode
    2376140
  • Title

    Thin-film decoupling capacitors for multi-chip modules

  • Author

    Dimos, D. ; Lockwood, S.J. ; Schwartz, R.W. ; Rodgers, M.S.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    1994
  • fDate
    1-4 May 1994
  • Firstpage
    894
  • Lastpage
    899
  • Abstract
    Thin-film decoupling capacitors based on ferroelectric lead lanthanum zirconate titanate (PLZT) films are being developed for use in advanced packages, such as multi-chip modules. These thin-film decoupling capacitors are intended to replace multi-layer ceramic capacitors for certain applications, since they can be more fully integrated into the packaging architecture. The increased integration that can be achieved should lead to decreased package volume and improved high-speed performance, due to a decrease in interconnect inductance. PLZT films are fabricated by spin coating using metal carboxylate/alkoxide solutions. These films exhibit very high dielectric constants (ε⩾900), low dielectric losses (tanδ≈0.01), excellent insulation resistances (ρ>1013 Ω-cm at 125°C), and good breakdown field strengths (EB≈900 kV/cm). For integrated circuit applications, the PLZT dielectric is less than 1 μm thick, which results in a large capacitance/area (8-9 nF/mm 2). The thin-film geometry and processing conditions also make these capacitors suitable for direct incorporation onto integrated circuits and for packages that require embedded components
  • Keywords
    ferroelectric thin films; integrated circuit packaging; lanthanum compounds; lead compounds; multichip modules; piezoceramics; thin film capacitors; 1 micron; MCM application; PLZT; PbLaZrO3TiO3; breakdown field strength; ferroelectric PLZT films; high dielectric constant; integrated circuit applications; low dielectric loss; metal carboxylate/alkoxide solutions; multichip modules; spin coating; thin-film decoupling capacitors; Capacitors; Ceramics; Dielectric losses; Ferroelectric films; Ferroelectric materials; Integrated circuit interconnections; Lanthanum; Packaging; Titanium compounds; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 1994. Proceedings., 44th
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-0914-6
  • Type

    conf

  • DOI
    10.1109/ECTC.1994.367523
  • Filename
    367523