MgAgAs structure type solid solutions as a new thermoelectric material

Author

Romaka, L.P. ; Stadnyk, Yu.V. ; Goryn, A.M. ; Gorelenko, Yu.K. ; Skolozdra, R.V.

Author_Institution

Inorgan. Chem. Dept., Lviv State Univ., Ukraine

fYear

1997

fDate

26-29 Aug 1997

Firstpage

516

Lastpage

519

Abstract

Solid solutions TiNiSn_1-xMe´_x (Me´=Al,Sb,Bi) and ZrNi_1-xMe´´_xSn (Me´´=Cr,Mn,Cu) with MgAgAs structure type were obtained on the basis of the TiNiSn and ZrNiSn semiconducting compounds. X-ray analysis was used to define the stability range of the solid solutions. The temperature dependence of the resistivity and thermopower showed a loss of semiconducting properties. The sign of thermopower remains negative for all solid solutions

Keywords

aluminium compounds; antimony compounds; bismuth compounds; chromium compounds; copper compounds; crystal structure; electrical resistivity; manganese compounds; nickel compounds; semiconductor materials; solid solutions; thermoelectric power; tin compounds; titanium compounds; zirconium compounds; TiNiSnAl; TiNiSnBi; TiNiSnSb; X-ray diffraction; ZrNiCrSn; ZrNiCuSn; ZrNiMnSn; resistivity; solid solutions; temperature dependence; thermoelectric material; thermopower; Artificial intelligence; Bismuth; Conductivity; Electrokinetics; Semiconductivity; Semiconductor materials; Solids; Stability; Thermoelectricity; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on

Conference_Location

Dresden

ISSN

1094-2734

Print_ISBN

0-7803-4057-4

Type

conf

DOI

10.1109/ICT.1997.667582

Filename

667582