Title :
Limitation of sputtered adhesion layer thickness for blanket CVD W in very high aspect contact filling
Author :
Sakamoto, Akihiro ; Chen, Shih-Chang ; Tamura, Hiroyuki ; Yoshimaru, Masaki ; Ino, Masayoshi
Author_Institution :
VLSI R&D Center, OKI Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
TiN formed by rapid thermal nitridation (RTN) of sputtered titanium (Ti) as an adhesion layer was used for blanket CVD tungsten (BLK-W) in very high aspect contact filling. In order to investigate the thickness limitation of the Ti film, contact resistance and junction leakage current were measured
Keywords :
CVD coatings; adhesion; contact resistance; leakage currents; metallisation; nitridation; sputtered coatings; titanium; titanium compounds; tungsten; Ti film; W-TiN; blanket CVD; contact resistance; junction leakage current; rapid thermal nitridation; sputtered adhesion layer thickness; very high aspect contact filling; Adhesives; Contact resistance; Current measurement; Electrical resistance measurement; Filling; Leakage current; Thickness measurement; Tin; Titanium; Tungsten;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153018
