DocumentCode
2376470
Title
Models for thyristors and diode in digital simulations
Author
Venturini, M. ; Sangiovanni-Vincentelli, A. ; Wood, P.
Author_Institution
Department of Electrical Engineering, and Computer Sciences, University of California at Berkeley
fYear
1979
fDate
18-22 June 1979
Firstpage
411
Lastpage
419
Abstract
Two models are proposed for digital simulations involving power diodes and thyristors. The models simulate all operating regions of the devices, and include transient and thermal behavior. Particular emphasis has been placed on reverse recovery behaviors, to improve simulation accuracy in high frequency and multiple device applications. Either model can be completely specified from standard data sheet parameters.
Keywords
Biological system modeling; Computational modeling; Integrated circuit modeling; Junctions; Resistors; Thyristors; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1979 IEEE
Conference_Location
San Diego, CA, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1979.7081054
Filename
7081054
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