DocumentCode :
2376732
Title :
Highly Linear 1.765 GHz Downconversion Double Balanced Mixer using InGaP/GaAs HBT Technology for AF-ICS Application
Author :
Choi, Won-Jun ; Kim, Nam-Young
Author_Institution :
Kwangwoon Univ., Seoul
fYear :
2007
fDate :
15-16 Nov. 2007
Firstpage :
53
Lastpage :
56
Abstract :
In this paper, an enhanced linearity down-conversion double balanced mixer (DBM) is implemented using InGaP/GaAs HBT technology for adaptive feedback-interference cancellation system (AF-ICS). This circuit is composed of internal bias supply, common collector output buffer for impedance reduction, and degeneration capacitor to improve linearity within a total area of 875times775 mum2. The results show that the degeneration technique improves linearity and achieves a conversion gain of 3.1 dB, a third-order input intercept point (IIP3) of 12.77 dBm, a third-order output intercept point (OIP3) of 15.87 dBm.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; mixers (circuits); AF-ICS application; HBT technology; InGaP-GaAs; InGaP-GaAs - Interface; adaptive feedback interference cancellation system; degeneration capacitor; downconversion double balanced mixer; enhanced linearity; frequency 1.765 GHz; gain 3.1 dB; impedance reduction; third order input intercept point; Adaptive systems; Capacitors; Circuits; Feedback; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Mixers; Radio frequency; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2007. KJMW 2007. Korea-Japan
Conference_Location :
Okinawa
Print_ISBN :
978-1-4244-1556-4
Type :
conf
DOI :
10.1109/KJMW.2007.4402238
Filename :
4402238
Link To Document :
بازگشت