DocumentCode :
2376938
Title :
Physical and technological limitations and their optimization in submicron ULSI interconnect
Author :
Oh, Soo-Young ; Chang, Keh-Jeng ; Moll, John L.
Author_Institution :
Hewlett-Packard, Palo Alto, CA, USA
fYear :
1991
fDate :
11-12 Jun 1991
Firstpage :
346
Lastpage :
349
Abstract :
The trend of the performance degradation, noise and reliability issues and their potential solutions are analyzed for submicron ULSI interconnect lines. The analysis shows that a copper (Cu) line will improve electromigration, but not the interconnect delay and cross-talk noise significantly. The low temperature operation improves the interconnect delay and electromigration, but increases the cost of system packaging. The optimum approach a combination of additional layers of nonscaled metal lines in a higher level and the use of repeaters to maximize the performance, noise and reliability and to minimize the risk and cost
Keywords :
VLSI; copper; crosstalk; delays; electromigration; integrated circuit technology; metallisation; noise; reliability; Cu line; crosstalk noise; electromigration; interconnect delay; low temperature operation; noise; nonscaled metal lines; optimization; packaging; performance degradation; reliability; repeaters; submicron ULSI interconnect; technological limitations; Copper; Costs; Crosstalk; Degradation; Delay; Electromigration; Packaging; Performance analysis; Temperature; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
Type :
conf
DOI :
10.1109/VMIC.1991.153021
Filename :
153021
Link To Document :
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