Title :
Investigation of structures and properties of dc magnetic control reactive sputtering deposited Ta2O5 electret films
Author :
Shixiang, Wu ; Shifang, Chen ; Zhanqing, Zhang ; Qingquan, Lei
Author_Institution :
Harbin Inst. of Technol., China
Abstract :
By studying the effects of sputtering current and pressure of gas on the growth rate and quality of Ta2O5 thin films, we have obtained the following optimum technical parameters: sputtering current-0.6 A; oxygen pressure lower than 3 Pa (for such conditions, the sputtering rate is greater than 64 nm/min.); even and homogeneous film. Using XRD, TEM and SEM measurements, the change of film structure was observed before and after annealing at high temperature. Using XPS, the chemical structure and composition of the Ta 2O5 surface was analysed. It is experimentally shown that this film after annealling possesses multicrystalline structure containing Ta2O5 and TaO along (0001) as a textured direction, and excellent electrical, chemical, piezoelectric and sensitive properties
Keywords :
X-ray diffraction; X-ray photoelectron spectra; annealing; electrets; piezoelectric thin films; scanning electron microscopy; sputter deposition; tantalum compounds; transmission electron microscopy; 3 Pa; DC magnetic control reactive sputtering; SEM; TEM; Ta2O5; XPS; XRD; annealing; electret films; gas pressure; growth rate; multicrystalline structure; piezoelectric properties; sputtering current; surface structure; thin films; Annealing; Chemicals; Dielectric measurements; Magnetic films; Magnetic properties; Piezoelectric films; Radio frequency; Sputtering; Substrates; Temperature;
Conference_Titel :
Electrets, 1994. (ISE 8), 8th International Symposium on
Conference_Location :
Paris
Print_ISBN :
0-7803-1940-0
DOI :
10.1109/ISE.1994.515220
