A 20 Watt Micro-strip X-Band AlGaN/GaN HPA MMIC for Advanced Radar Applications

Author

Costrini, C. ; Calori, M. ; Cetronio, A. ; Lanzieri, C. ; Lavanga, S. ; Peroni, M. ; Limiti, E. ; Serino, A. ; Ghione, G. ; Melone, G.

Author_Institution

SELEX Sist. Integrati S.p.A., Rome

fYear

2008

fDate

27-31 Oct. 2008

Firstpage

1433

Lastpage

1436

Abstract

In this paper a first iteration design, fabrication and test of a two-stage X-Band MMIC HPA in micro-strip AlGaN/GaN technology is reported. With 20 V drain voltage operating bias point, at 3 dB compression point, the HPA delivers a pulsed output power ranging from 21 to 28.5 W, an associated gain from 12.9 to 16.5 dB and an associated PAE from circa 30% to 40%, over the 8-10.5 GHz frequency bandwidth. In the best performance frequency points (8.5 and 9 GHz) the HPA exhibits a saturated output power of 30 W with an associated PAE of 40%.

Keywords

III-V semiconductors; MMIC power amplifiers; aluminium compounds; amplification; gallium compounds; microstrip circuits; power HEMT; radar applications; wide band gap semiconductors; bandwidth 8 GHz to 10.5 GHz; compression point; drain voltage; frequency bandwidth; gain; gain 12.9 dB to 16.5 dB; high electron mobility transistor; high power amplifiers; iteration design; micro-strip X-band HPA MMIC; operating bias point; power 30 W; voltage 20 V; Aluminum gallium nitride; Fabrication; Frequency; Gallium nitride; MMICs; Power generation; Pulse compression methods; Radar applications; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. EuMC 2008. 38th European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-006-4

Type

conf

DOI

10.1109/EUMC.2008.4751735

Filename

4751735