Plasma effects in HEMT-like structures: Equivalent circuit model and simulation

An electric equivalent circuit is developed to study the manifestation of the plasma oscillations excited in the two-dimensional electron (2DE) channel of high-electron mobility transistor (HEMT)-like structure implementing IsSpice simulation. The components of the equivalent circuit model are related to physical and geometrical parameters of the structure. The distinctive feature of the developed model is the distributed circuit representation of the gated portion of the 2DEG channel with gate voltage dependent resistance and inductance. The simulated HEMT frequency performance reveals resonant behavior. The effect of "load" impedance mismatch is also discussed. The reported equivalent circuit approach invoking IsSpice simulation can be used for the evaluation and optimization of the performance of HEMT-like structures which operation is based on plasma wave excitation.