Title :
Large-Signal Performance of Resonant Tunnelling Diodes in K-Band Oscillators
Author :
Münstermann, B. ; Matiss, A. ; Brockerhoff, W. ; Tegude, F.-J.
Author_Institution :
Solid-State Electron. Dept., Univ. of Duisburg-Essen, Duisburg
Abstract :
The large signal behaviour of resonant tunnelling diodes (RTD) in K-band oscillators is investigated in order to optimize the RF-output power of RTD-based voltage controlled oscillators. Circuit simulations based on a scaleable large-signal RTD model are presented and different approaches to increase the RF-power are proposed. A new differential RTD-VCO-circuit in InP RTD/HBT technology with a wide tuning range is introduced, employing balanced RTD-pairs.
Keywords :
III-V semiconductors; bipolar transistor circuits; indium compounds; microwave oscillators; resonant tunnelling diodes; semiconductor device models; voltage-controlled oscillators; InP; K-band oscillator; RTD-HBT technology; RTD-based voltage controlled oscillator; circuit simulation; differential RTD-VCO-circuit; resonant tunnelling diode; scaleable large-signal RTD model; Capacitors; Diodes; Epitaxial growth; K-band; Microwave oscillators; Resonant tunneling devices; Semiconductor process modeling; Solid state circuits; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Microwave Conference, 2008. EuMC 2008. 38th European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-006-4
DOI :
10.1109/EUMC.2008.4751744
