24 GHz LTCC Amplifier Using Packaged HEMTs

Author

Napijalo, Veljko ; Cojocaru, Vicentiu ; Yokoyama, Takeshi

Author_Institution

TDK Electron. Ireland, Dublin

fYear

2008

fDate

27-31 Oct. 2008

Firstpage

1489

Lastpage

1492

Abstract

The design of an LTCC self-packaged amplifier for the 24 GHz ISM band using packaged transistors is described. The amplifier utilizes to a full extent the benefits of the multilayer environment as all matching networks are realized by employing multilayer impedance transformers. Advantages of using such transformers are the elimination of dedicated DC blocks, flexible layout routing and a milder discontinuity in the vertical transitions towards the PCB connection. A combination of on-tile and off-tile distributed matching has been implemented allowing for the amplifier to be used on various PCB substrate materials. The amplifier can be used in both the receiver and transmitter chains, in various application scenarios. Examples of the measured amplifier characteristics designed on two different substrate materials are shown, illustrating the trade-off between the cost and the performance of the materials used.

Keywords

high electron mobility transistors; microwave amplifiers; printed circuits; ISM band; LTCC amplifier; PCB substrate materials; frequency 24 GHz; multilayer impedance transformers; off-tile distributed matching; on-tile distributed matching; packaged HEMT; packaged transistors; receiver chains; transmitter chains; Costs; Distributed amplifiers; HEMTs; Impedance; MODFETs; Nonhomogeneous media; Packaging; Routing; Transformers; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. EuMC 2008. 38th European

Conference_Location

Amsterdam

Print_ISBN

978-2-87487-006-4

Type

conf

DOI

10.1109/EUMC.2008.4751749

Filename

4751749