Title :
Plasma resistant modified I-line, deep UV and E-beam resists
Author :
Bousaba, J.E. ; Tranjan, F.M. ; Qushair, L.E. ; DuBois, T.D. ; Bobbio, S.M. ; Jose, M.T. ; Nickel, J.L. ; Jones, S.K. ; Dudley, B.
Author_Institution :
Dept. of Electr. Eng., North Carolina Univ., Charlotte, NC, USA
Abstract :
This paper presents chemically modified photoresists for use as plasma etch masks over various substrates during patterning in IC manufacturing with sub-0.5 micron resolution. The modification consists of directly adding the modifying compounds into the photoresist solutions. The added compounds increase the Oxygen, Fluorine and Chlorine plasma resistance of photoresists, thus promoting a high etch rate selectivity with respect to other substrates and films (e.g. polyimide, PMGI, oxide, etc.)
Keywords :
electron resists; integrated circuit technology; masks; photoresists; sputter etching; 0.5 micron; Cl; E-beam resists; F2; I-line resists; IC manufacturing; O2; PMGI; chemically modified photoresists; chlorine; deep UV resists; etch rate selectivity; films; fluorine; oxide; oxygen; patterning; plasma etch masks; plasma resistance; polyimide; sub-0.5 micron resolution; substrates; Chemical technology; Etching; Oxygen; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma properties; Polyimides; Resists; Silicon;
Conference_Titel :
Electronic Components and Technology Conference, 1994. Proceedings., 44th
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-0914-6
DOI :
10.1109/ECTC.1994.367592
