DocumentCode
2378346
Title
Medium power, medium voltage, large area 6H-SiC pn junctions
Author
Chante, J.P. ; Locatelli, M.L. ; Millan, J. ; Godignon, P. ; Savkina, N.S. ; Giagovskii, A.A. ; Lebedev, A. ; Badila, M. ; Brezeanu, G. ; Tudor, B. ; Sorescu, M. ; Banoiu, G. ; Bica, G. ; Banu, V.
Author_Institution
CEGELY-INSA de Lyon, France
Volume
1
fYear
1998
fDate
6-10 Oct 1998
Firstpage
307
Abstract
Our paper reports technology and electrical characteristics of medium power, medium voltage, large area 6H-SiC pn junctions, fabricated in a factory environment
Keywords
p-n junctions; silicon compounds; wide band gap semiconductors; SiC; electrical characteristics; fabrication technology; medium power medium voltage large area 6H-SiC p-n junction; Boron; Data mining; Diodes; Epitaxial growth; Medium voltage; Metallization; Nitrogen; Plasma temperature; Silicon carbide; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.732386
Filename
732386
Link To Document