The material characteristics of a new methyl-phenyl silsesquioxane spin-on glass for use in a global nonetchback interconnect planarization process

Author

Allman, D.D.J. ; Fuchs, K.P. ; Kwong, D.L.

Author_Institution

NCR Microelectron. Products Div., Colorado Springs, CO, USA

fYear

1991

fDate

11-12 Jun 1991

Firstpage

373

Lastpage

375

Abstract

A new methyl-phenyl silsesquioxane SOG, GR 720, has been successfully used for a global, nonetchback intermetal planarization process. A double coat of GR 720 SOG is capable of filling submicron features with aspect ratios greater than 6, also producing global planarization without gaps, voids or cracks. The dielectric constant of GR 720 after a 400°C thermal cure was determined to be 2.9 at 1 MHz as measured by C-V techniques. TGA analysis demonstrates that the GR 720 SOG material is stable to 500°C. DSC analysis indicates that the solvents are removed at 130°C with no additional material evolution up to 500°C

Keywords

glass; integrated circuit technology; materials testing; metallisation; permittivity measurement; thermal analysis; 1 MHz; 100 to 500 C; C-V techniques; DSC analysis; GR 720; SOG; TGA analysis; aspect ratios; dielectric constant; differential scanning calorimetry; double coat; filling submicron features; global planarization; interconnect planarization process; material characteristics; methyl-phenyl silsesquioxane; nonetchback intermetal planarization process; permittivity; spin-on glass; thermal cure; thermogravimetric analysis; Dielectric constant; Dielectric measurements; Etching; Filling; Glass; Microelectronics; Planarization; Solvents; Temperature; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE

Conference_Location

Santa Clara, CA

Print_ISBN

0-87942-673-X

Type

conf

DOI

10.1109/VMIC.1991.153029

Filename

153029