Title :
Nonetchback silicate spin-on glass for advanced BiCMOS technology
Author :
Chung, Henry ; Wong, Sam ; Lim, Sheldon
Author_Institution :
Signetics Co., Sunnyvale, CA, USA
Abstract :
Silicate spin-on glass has been successfully used to planarize the contact dielectric and via dielectric in an advanced BiCMOS technology, QUBiC. With SOG planarization, excellent interconnect performance and reliability were achieved. More significantly, the results of this report indicate that SOG can be used very close to the devices without degrading the device performance and reliability
Keywords :
BIMOS integrated circuits; VLSI; glass; metallisation; reliability; QUBiC; SOG planarization; VLSI; advanced BiCMOS technology; contact dielectric; double level metallisation; interconnect performance; multilevel interconnection; nonetchback planarization; reliability; silicate spin-on glass; via dielectric; BiCMOS integrated circuits; Bipolar transistors; Dielectric substrates; Etching; Glass; Planarization; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma temperature;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153030
