• DocumentCode
    2378783
  • Title

    Semi-empirical modelling of SiO2 chemical-mechanical polishing planarization

  • Author

    Burke, Peter A.

  • Author_Institution
    IBM Gen. Technol. Div., Essex Junction, VT, USA
  • fYear
    1991
  • fDate
    11-12 Jun 1991
  • Firstpage
    379
  • Lastpage
    384
  • Abstract
    Describes process characterization techniques and key structural dependencies of chemical-mechanical polishing (CMP) planarization. Also presented are a closed-solution model for simple analysis and a differential model for more complex analysis of CMP planarization and its pattern and polishing pad dependencies. The modelling and characterization give insights into and quantify the effects of `down´ area dimensions, `up´ area patterning, and feature step heights. Differentially modelled results predict corner-rounding and, in doing so, suggest a mechanism
  • Keywords
    VLSI; metallisation; modelling; silicon compounds; SiO2 planarization; ULSI; characterization; chemical-mechanical polishing planarization; closed-solution model; corner rounding prediction; differential model; key structural dependencies; multilevel interconnection; polishing pad dependencies; process characterization techniques; semi empirical modelling; simple analysis; Chemical processes; Chemical technology; Etching; Isolation technology; Pattern analysis; Planarization; Predictive models; Semiconductor device modeling; Ultra large scale integration; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    0-87942-673-X
  • Type

    conf

  • DOI
    10.1109/VMIC.1991.153031
  • Filename
    153031
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2378783