Title :
Semi-empirical modelling of SiO2 chemical-mechanical polishing planarization
Author_Institution :
IBM Gen. Technol. Div., Essex Junction, VT, USA
Abstract :
Describes process characterization techniques and key structural dependencies of chemical-mechanical polishing (CMP) planarization. Also presented are a closed-solution model for simple analysis and a differential model for more complex analysis of CMP planarization and its pattern and polishing pad dependencies. The modelling and characterization give insights into and quantify the effects of `down´ area dimensions, `up´ area patterning, and feature step heights. Differentially modelled results predict corner-rounding and, in doing so, suggest a mechanism
Keywords :
VLSI; metallisation; modelling; silicon compounds; SiO2 planarization; ULSI; characterization; chemical-mechanical polishing planarization; closed-solution model; corner rounding prediction; differential model; key structural dependencies; multilevel interconnection; polishing pad dependencies; process characterization techniques; semi empirical modelling; simple analysis; Chemical processes; Chemical technology; Etching; Isolation technology; Pattern analysis; Planarization; Predictive models; Semiconductor device modeling; Ultra large scale integration; Wiring;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153031
