Title :
Study of Electron Transport Characteristics through Self-Aligned Si-Based Quantum Dots
Author :
Makihara, Katsunori ; Liu, Chong ; Ikeda, Mitsuhisa ; Miyazaki, Seiichi
Author_Institution :
Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
Abstract :
This paper discussed about the self-aligned Si-based quantum dots structures with ultrathin oxide interlayer spontaneously formed on thermally-grown SiO2-Si(100) formed by LPCVD, the current-voltage characteristics at room temperature have shown the clear current bump and negative differential conductance and the oscillatory current with a voltage period of ~18mV at around the 1st resonance voltage.
Keywords :
chemical vapour deposition; electrical conductivity; elemental semiconductors; semiconductor quantum dots; silicon; silicon compounds; thin films; LPCVD; Si-SiO2; current-voltage characteristics; electron transport characteristics; negative differential conductance; oscillatory current; resonance voltage; self-aligned Si-based quantum dots; temperature 293 K to 298 K; thermally-grown SiO2-Si(100); ultrathin oxide interlayer; voltage period; Educational institutions; Oxidation; Quantum dots; Resonant tunneling devices; Silicon; Substrates; Surface treatment;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222414
