Abstract :
Summary form only given, as follows. Welcome to the 6th International Silicon??Germanium Technology and Device Meeting (ISTDM), which is being held beside the University of California at Berkeley! Silicon??germanium (SiGe) has enabled key advancements in silicon??based microelectronics technology, including heterojunction bipolar transistors for RF communication and strained metal??oxidesemiconductor field??effect transistors for high??performance digital computing, and it will enable more energy??efficient electronic devices in the future. The latest results on emerging/new SiGe technology, devices, circuits, and applications will be presented at this conference, in 12 sessions comprising a total of 97 papers (15 invited, 46 oral, and 36 posters). An evening panel session will provide a lively forum for open exchange of information and perspectives in the field. I hope that you will share your ideas and enjoy all that the conference and Berkeley has to offer!
