• DocumentCode
    2379070
  • Title

    Low Temperature RPCVD Epitaxial Growth of Si1-xGex and Ge Using Si2H6 and Ge2H6

  • Author

    Wirths, S. ; Buca, D. ; Tiedemann, A.T. ; Bernardy, P. ; Holländer, B. ; Stoica, T. ; Mussler, G. ; Breuer, U. ; Mantl, S.

  • Author_Institution
    JARA-Fundamentals of Future Inf. Technol., Forschungszentrum Juelich, Julich, Germany
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper presented an epitaxial growth studies of pseudomorphic Si1-xGex and relaxed Ge layers on 200 mm Si(100) wafers using an AIXTRON Tricent® RPCVD tool.
  • Keywords
    Ge-Si alloys; elemental semiconductors; germanium; plasma CVD; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; AIXTRON Tricent RPCVD tool; Si; Si(100) wafers; Si1-xGex-Ge; low-temperature RPCVD epitaxial growth; plasma CVD; pseudomorphic layers; relaxed layers; size 200 mm; Epitaxial growth; Plastics; Quantum well devices; Silicon; Silicon germanium; Temperature measurement; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222424
  • Filename
    6222424
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2379070