Title :
Low Temperature RPCVD Epitaxial Growth of Si1-xGex and Ge Using Si2H6 and Ge2H6
Author :
Wirths, S. ; Buca, D. ; Tiedemann, A.T. ; Bernardy, P. ; Holländer, B. ; Stoica, T. ; Mussler, G. ; Breuer, U. ; Mantl, S.
Author_Institution :
JARA-Fundamentals of Future Inf. Technol., Forschungszentrum Juelich, Julich, Germany
Abstract :
This paper presented an epitaxial growth studies of pseudomorphic Si1-xGex and relaxed Ge layers on 200 mm Si(100) wafers using an AIXTRON Tricent® RPCVD tool.
Keywords :
Ge-Si alloys; elemental semiconductors; germanium; plasma CVD; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; AIXTRON Tricent RPCVD tool; Si; Si(100) wafers; Si1-xGex-Ge; low-temperature RPCVD epitaxial growth; plasma CVD; pseudomorphic layers; relaxed layers; size 200 mm; Epitaxial growth; Plastics; Quantum well devices; Silicon; Silicon germanium; Temperature measurement; X-ray scattering;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222424
