Title :
Very Low Temperature Reduced Pressure - Chemical Vapour Deposition of SiGe, Si1-yCy and Si:P Layers: Silane versus Disilane
Author :
Hartmann, J.-M. ; Benevent, V. ; Deguet, C.
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
This paper benchmarked SiH4 and Si2H6 for the (001) growth of SiGe, Si1-yCy and Si:P (in a 300 mm ASM Epsilon 3200 RP-CVD tool). The feasibility of growing SiGe layers at 500°C, 20 Torr thanks to both precursors were assessed.
Keywords :
Ge-Si alloys; chemical vapour deposition; elemental semiconductors; phosphorus; semiconductor epitaxial layers; semiconductor growth; silicon; silicon compounds; vapour phase epitaxial growth; wide band gap semiconductors; ASM Epsilon 3200 RP-CVD tool; Si:P; Si1-yCy; Si2H6; Si2H6 (001) growth; SiGe; SiH4; SiH4 (001) growth; pressure 20 torr; size 300 mm; temperature 500 degC; very low-temperature reduced pressure-chemical vapour deposition; Chemicals; Films; Silicon; Silicon germanium; Solids; X-ray scattering;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222426
