• DocumentCode
    2379106
  • Title

    Very Low Temperature Reduced Pressure - Chemical Vapour Deposition of SiGe, Si1-yCy and Si:P Layers: Silane versus Disilane

  • Author

    Hartmann, J.-M. ; Benevent, V. ; Deguet, C.

  • Author_Institution
    LETI, CEA, Grenoble, France
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper benchmarked SiH4 and Si2H6 for the (001) growth of SiGe, Si1-yCy and Si:P (in a 300 mm ASM Epsilon 3200 RP-CVD tool). The feasibility of growing SiGe layers at 500°C, 20 Torr thanks to both precursors were assessed.
  • Keywords
    Ge-Si alloys; chemical vapour deposition; elemental semiconductors; phosphorus; semiconductor epitaxial layers; semiconductor growth; silicon; silicon compounds; vapour phase epitaxial growth; wide band gap semiconductors; ASM Epsilon 3200 RP-CVD tool; Si:P; Si1-yCy; Si2H6; Si2H6 (001) growth; SiGe; SiH4; SiH4 (001) growth; pressure 20 torr; size 300 mm; temperature 500 degC; very low-temperature reduced pressure-chemical vapour deposition; Chemicals; Films; Silicon; Silicon germanium; Solids; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222426
  • Filename
    6222426
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2379106