Title :
Enhancement of Phosphorus Dopant Activation and Diffusion Suppression by Fluorine Co-Implant in Epitaxially Grown Germanium
Author :
Jung, Woo-Shik ; Nam, Ju Hyung ; Lin, J. -Y Jason ; Ryu, Seunghwa ; Nainani, Aneesh ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
This paper aimed to achieve both higher activation level and less diffusion by passivating the vacancies with fluorine (F) implant. The effect of F on P-doped Ge was also demonstrated. In addition, retardation of diffusion by decreased dopant-vacancy pair was indicated, although further experiments were needed with prolonged annealing time to do more detailed analysis.
Keywords :
annealing; chemical vapour deposition; doping profiles; elemental semiconductors; fluorine; germanium; impurity states; passivation; phosphorus; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; surface diffusion; vacancies (crystal); vapour phase epitaxial growth; CVD; Ge:P,F; activation level; annealing; diffusion suppression; dopant-vacancy pair; epitaxially grown germanium; fluorine coimplant; passivation; phosphorus dopant activation; Annealing; Germanium; Implants; Junctions; Passivation; Physics; Temperature measurement;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222434
