• DocumentCode
    2379301
  • Title

    Comparative analysis of NBTI effects on low power and high performance flip-flops

  • Author

    Ramakrishnan, K. ; Wu, X. ; Vijaykrishnan, N. ; Xie, Y.

  • Author_Institution
    Dept. of Comput. Sci. & Eng., Pennsylvania State Univ., University Park, PA
  • fYear
    2008
  • fDate
    12-15 Oct. 2008
  • Firstpage
    200
  • Lastpage
    205
  • Abstract
    Mitigating the circuit aging effect in digital circuits has become a very important concern for current and future technology nodes. Negative Bias Temperature Instability (NBTI) is one of the most important circuit aging mechanisms, which can incur timing errors. Flip-flops play a vital role as storage elements in pipelined architectures and are prone to effects of aging. NBTI increases the transistor threshold voltage, affecting the performance of the chip. In this paper, we study the effects of NBTI on the timing characteristics of different types of low power and high performance flip-flops. Factors such as input data probability and temperature which affect the degradation rate are also analyzed.
  • Keywords
    digital circuits; flip-flops; NBTI effects; circuit aging effect mitigation; circuit aging mechanisms; degradation rate; high performance flip-flops; input data probability; negative bias temperature instability; storage elements; timing characteristics; transistor threshold voltage; Aging; Digital circuits; Flip-flops; Negative bias temperature instability; Niobium compounds; Performance analysis; Temperature distribution; Threshold voltage; Timing; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Design, 2008. ICCD 2008. IEEE International Conference on
  • Conference_Location
    Lake Tahoe, CA
  • ISSN
    1063-6404
  • Print_ISBN
    978-1-4244-2657-7
  • Electronic_ISBN
    1063-6404
  • Type

    conf

  • DOI
    10.1109/ICCD.2008.4751862
  • Filename
    4751862