Title :
Germanium nMOSFETs with GeO2 Passivation and n+/p Junctions Formed by Spin-On Dopants
Author :
Mantey, Jason ; Hsu, William ; Jamil, Mustafa ; Onyegam, Emmanuel U. ; Tutuc, Emanuel ; Banerjee, Sanjay K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
Abstract :
In this work, Ge devices are fabricated with a gate stack consisting of an Al2O3 high-k dielectric with GeO2 interfacial passivation layer and a TaN metal gate. Diodes and nFETs contain n+ layers formed via a “spin-on dopant” (SOD), using Ni source and drain contacts.
Keywords :
MOSFET; aluminium compounds; germanium compounds; p-n junctions; passivation; tantalum; Al2O3; GeO2; TaN; diodes; gate stack; germanium nMOSFET; interfacial passivation layer; n+ layers; n+/p junctions; nFET; source and drain contacts; spin-on dopants; Electron mobility; Germanium; Junctions; Logic gates; Passivation; Rapid thermal annealing; Silicon;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222438
