• DocumentCode
    2379331
  • Title

    Germanium nMOSFETs with GeO2 Passivation and n+/p Junctions Formed by Spin-On Dopants

  • Author

    Mantey, Jason ; Hsu, William ; Jamil, Mustafa ; Onyegam, Emmanuel U. ; Tutuc, Emanuel ; Banerjee, Sanjay K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, Ge devices are fabricated with a gate stack consisting of an Al2O3 high-k dielectric with GeO2 interfacial passivation layer and a TaN metal gate. Diodes and nFETs contain n+ layers formed via a “spin-on dopant” (SOD), using Ni source and drain contacts.
  • Keywords
    MOSFET; aluminium compounds; germanium compounds; p-n junctions; passivation; tantalum; Al2O3; GeO2; TaN; diodes; gate stack; germanium nMOSFET; interfacial passivation layer; n+ layers; n+/p junctions; nFET; source and drain contacts; spin-on dopants; Electron mobility; Germanium; Junctions; Logic gates; Passivation; Rapid thermal annealing; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222438
  • Filename
    6222438
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2379331