Analysis of USJ Formation with Combined RTA/Laser Annealing Conditions for 28nm High-K/Metal Gate CMOS Technology Using Advanced TCAD for Process and Device Simulation

Author

Bazizi, E.M. ; Pandey, S.M. ; Wang, C. ; Jiang, I. ; Chu, S. ; Benistant, F. ; Herrmann, T. ; Faul, J. ; Franke, D. -W ; Wiatr, M. ; Horstmann, M.

Author_Institution

GLOBALFOUNDRIES, Singapore, Singapore

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

2

Abstract

TCAD process and device simulations are used to gain physical understanding for the integration of laserannealed junctions into a 28 nm high-k/metal gate first process flow. Spike-RTA (Rapid Thermal Annealing) scaling used for transient enhanced diffusion (TED) suppression and shallow extension formation is investigated. In order to overcome the performance loss due to a reduced RTA, laser anneal (LSA) is introduced after Spike-RTA to form highly activated and ultra shallow junctions (USJ). In this work, the impact of different annealing conditions on the performance of NMOS and PMOS devices is investigated in terms of Vth and Ion/Ioff, considering lateral dopant diffusion and activation.

Keywords

CMOS integrated circuits; laser beam annealing; rapid thermal annealing; semiconductor doping; semiconductor junctions; technology CAD (electronics); NMOS device; PMOS device; Spike-RTA; TED suppression; USJ formation; advanced TCAD; dopant activation; high-k/metal gate CMOS technology; laser annealing; lateral dopant diffusion; rapid thermal annealing; shallow extension formation; size 28 nm; transient enhanced diffusion; ultra shallow junction; Annealing; Junctions; Lasers; Logic gates; MOS devices; Semiconductor process modeling; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Conference_Location

Berkeley, CA

Print_ISBN

978-1-4577-1864-9

Electronic_ISBN

978-1-4577-1863-2

Type

conf

DOI

10.1109/ISTDM.2012.6222439

Filename

6222439