Electromigration characteristics of Al/W via contact under unidirectional and bidirectional current conditions

Author

Tao, Jiang ; Young, K.K. ; Pico, Carey A. ; Cheung, Nathan W. ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1991

fDate

11-12 Jun 1991

Firstpage

390

Lastpage

392

Abstract

Investigates the electromigration performances of selective CVD tungsten filled vias under DC and AC stressing currents. The authors´ results show that the electromigration failure always occurred in metal 2 layer at the via area. The AC lifetimes of the test structure are found to be much longer (more than 1000X) than DC lifetimes under same peak stressing current density. No obvious electromigration induced damage was observed in metal 1 in the test structure we studied

Keywords

CVD coatings; VLSI; aluminium; electromigration; metallisation; reliability; tungsten; AC lifetimes; AC stressing currents; Al-W; DC lifetimes; DC stressing currents; ULSI; W plug vias; bidirectional current conditions; electromigration failure; electromigration induced damage; electromigration performances; metal 2 layer; multilevel interconnection; peak stressing current density; unidirection current; via area; Circuit testing; Condition monitoring; Current density; Electric resistance; Electromigration; Failure analysis; Heating; Probes; Scanning electron microscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE

Conference_Location

Santa Clara, CA

Print_ISBN

0-87942-673-X

Type

conf

DOI

10.1109/VMIC.1991.153034

Filename

153034