Title :
Characterization of Anisotropic Strain Relaxation after Mesa Isolation for Strained SGOI and SiGe/Si Structure with Newly Developed High-NA and Oil-Immersion Raman Method
Author :
Usuda, Koji ; Kosemura, Daisuke ; Tomita, Motohiro ; Ogura, Atsushi ; Tezuka, Tsutomu
Author_Institution :
Green Nanoelectron. Collaborative Res. Center (GNC), AIST, Tsukuba, Japan
Abstract :
In this study, we have characterized local strain relaxation just after mesa isolation of strained SiGe layers using the new Raman method, and NBD techniques.
Keywords :
Ge-Si alloys; MOSFET; Raman spectra; elemental semiconductors; NBD techniques; SiGe-Si; anisotropic strain relaxation; characterization; high-NA Raman method; mesa isolation; oil-immersion Raman method; strained SGOI; Image edge detection; Lenses; Phonons; Silicon; Silicon germanium; Strain; Stress;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222440
