• DocumentCode
    2379382
  • Title

    Characterization of Anisotropic Strain Relaxation after Mesa Isolation for Strained SGOI and SiGe/Si Structure with Newly Developed High-NA and Oil-Immersion Raman Method

  • Author

    Usuda, Koji ; Kosemura, Daisuke ; Tomita, Motohiro ; Ogura, Atsushi ; Tezuka, Tsutomu

  • Author_Institution
    Green Nanoelectron. Collaborative Res. Center (GNC), AIST, Tsukuba, Japan
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this study, we have characterized local strain relaxation just after mesa isolation of strained SiGe layers using the new Raman method, and NBD techniques.
  • Keywords
    Ge-Si alloys; MOSFET; Raman spectra; elemental semiconductors; NBD techniques; SiGe-Si; anisotropic strain relaxation; characterization; high-NA Raman method; mesa isolation; oil-immersion Raman method; strained SGOI; Image edge detection; Lenses; Phonons; Silicon; Silicon germanium; Strain; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222440
  • Filename
    6222440
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2379382