Title :
Epitaxial Growth and Anisotropic Strain Relaxation of Ge1-xSnx Layers on Ge(110) Substrates
Author :
Asano, Takanori ; Shimura, Yosuke ; Taoka, Noriyuki ; Nakatsuka, Osamu ; Zaima, Shigeaki
Author_Institution :
Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
Abstract :
We have achieved the heteroepitaxial growth of a pseudomorphic Ge0.954Sn0.046 layer without Sn precipitation on a Ge(110) substrate. The strain in the Ge1-xSnx layer preferentially relaxed along [001] direction with annealing over 500°C due to the anisotropic layout of glide planes on Ge(110) surface. These results suggest that an uniaxially compressive strained Ge1-xSnx structure can be realized with the anisotropic strain relaxation.
Keywords :
annealing; compressibility; compressive strength; germanium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; slip; Ge; Ge(110) substrates; Ge1-xSnx; [001] direction; anisotropic layout; anisotropic strain relaxation; annealing; glide planes; heteroepitaxial growth; molecular beam epitaxy method; pseudomorphic layer; semiconductor material; temperature 500 degC; uniaxially compressive strained structure; Annealing; Epitaxial growth; Lattices; Strain; Substrates; Tin; Transistors;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222442
