Uniaxially Strained Ge-Rich SiGe Nanowire Channel Technology for High-Performance CMOS

Hole-mobility and carrier-velocity characteristics of Ge-rich SGOI-nanowire were comprehensively investigated. The Ge-rich SGOI-nanowire channel devices were found to have higher hole-mobility and velocity than that of the unstrained-Ge and SOI devices. The ideal performance assessment revealed that a significant increase (over 2.6 times) in drive current is expected. These indicate that the Ge-rich uniaxially strained SGOI-nanowire channel device has potential to paves the way to future low-power consumption and high-performance CMOS technology.