• DocumentCode
    2379531
  • Title

    (NH4)2S Passivation for High Mobility Germanium-Tin (GeSn) p-MOSFETs

  • Author

    Wang, Lanxiang ; Su, Shaojian ; Wang, Wei ; Gong, Xiao ; Yang, Yue ; Guo, Pengfei ; Zhang, Guangze ; Xue, Chunlai ; Cheng, Buwen ; Han, Genquan ; Yeo, Yee-Chia

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    High mobility Ge0.958Sn0.042 p-MOSFETs with pre-gate (NH4)2S passivation showed decent transfer and output characteristics. Ge0.958Sn0.042 p-MOSFETs demonstrated here have a higher peak mobility in comparison with those of other GeSn p-MOSFETs reported. However, the mobility at high inversion charge density is still lower than that of Si2H6 passivated GeSn p-MOSFETs, and further investigation is needed.
  • Keywords
    MOSFET; germanium compounds; nitrogen compounds; passivation; (NH4)2S; GeSn; high inversion charge density; high mobility germanium-tin p-MOSFET; passivation; Films; Logic gates; MOSFET circuits; Passivation; Surface cleaning; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222449
  • Filename
    6222449
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2379531